SUP60N10-18P
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) R DS(on) ( Ω )
0.0183 at V GS = 10 V
100
0.023 at V GS = 8.0 V
I D (A)
60
53
Q g (Typ.)
48
FEATURES
? TrenchFET ? Power MOSFET
? 100 % R g and UIS Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Industrial
? Power Supply
TO-220AB
D
G
G D S
Top View
Ordering Information: SUP60N10-18P-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise noted
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Limit
100
± 20
Unit
V
150
Continuous Drain Current (T J = 175 °C)
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy a
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T C = 25 °C
T C = 70 °C
L = 0.1 mH
T C = 25 °C
T A = 25 °C c
I D
I DM
I AS
E AS
P D
T J , T stg
60
50
100
45
101
b
3.75
- 55 to 175
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount) c
Junction-to-Case (Drain)
Symbol
R thJA
R thJC
Limit
40
1.0
Unit
°C/W
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
Document Number: 65003
S09-1096-Rev. A, 15-Jun-09
www.vishay.com
1
相关PDF资料
SUP65P04-15-E3 MOSFET P-CH 40V 65A TO220AB
SUP75N03-04-E3 MOSFET N-CH D-S 30V TO220AB
SUP75P03-07-E3 MOSFET P-CH D-S 30V TO220AB
SUP90N08-7M7P-E3 MOSFET N-CH D-S 75V TO220AB
SUP90P06-09L-E3 MOSFET P-CH 60V 90A TO220AB
SUV85N10-10-E3 MOSFET N-CH D-S 100V TO220AB
SV-LED-125E HEATSINK DEGREASED 25.4MM
SV21C201BJA01B00 ROTARY POS SENSOR 200 DEGREE
相关代理商/技术参数
SUP60N6-18 制造商:未知厂家 制造商全称:未知厂家 功能描述:
SUP65P04-15 功能描述:MOSFET 40V 65A 120W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUP65P04-15-E3 功能描述:MOSFET 40V 65A 120W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUP65P06 制造商:TEMIC 制造商全称:TEMIC Semiconductors 功能描述:P-Channel Enhancement-Mode Transistors
SUP65P06-20 功能描述:MOSFET 60V 65A 187W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUP65P06-20 制造商:Vishay Siliconix 功能描述:MOSFET P TO-220
SUP65P06-20-E3 功能描述:MOSFET 60V 65A 187W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SUP65P06-20-E3 制造商:Vishay Siliconix 功能描述:MOSFET